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Magazine Name : Ieee Transactions On Electron Devices
Year : 2005Volume number : 52Issue:01
Bcb-Bridged Distributed Wideband Spst Switch Using 0.25 Um In 0.5 As Metamorphic Hemts(Article) Subject:
Compound Semiconductor Devices
Author:
K. C
Lin
page:
1
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5
Design Optimization Of High Breakdown Voltage Aigan-Gan Power Hemt On An Insulating Substrate For Ron A-Vb Tradeoff Characteristics(Article) Subject:
Solid-State Power And High Voltage
Author:
Waturu
Saito
page:
106
-
111
New Addressing Method Using Overlapping Scan Time Of Ac-Pdp(Article) Subject:
Optoelectronics, Displays And Imaging
Author:
S. G
Kim
page:
11
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16
Design And Fabrication Of Resurf Mosfets On 4h-Sic(0001). And 6h-(0001)(Article) Subject:
Solid-State Power And High Voltage
Author:
T
Kimoto
page:
112
-
117
A Model To Study The Effect Of Selective Anodic Oxidation On Ultrthin Gate Oxides(Article) Subject:
Brief Description
Author:
V G
Marathe
page:
118
-
120
Znse Homeepitaxial Msm Photodetectors With Transparent Ito Contat Electrodes(Article) Subject:
Brief Description
Author:
T K
Lin
page:
121
-
123
Correct Biasing Rules For Virtual Dg Mode Operation In Soi-Mode Operation In Soi-Mosfets(Article) Subject:
Brief Description
Author:
A
Ohata
page:
124
-
125
Study Of Cmos Aps Responsivity Enhancement: Ring-Shaped Photodiode(Article) Subject:
Brief Description
Author:
T
Danov
page:
126
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129
Shoc Rfectifier: A New Metal-Semiconductor Device With Excellent Forward And Reverse Characteristics(Article) Subject:
Brief Description
Author:
M.J
Kumar
page:
130
-
131
An Analysis Of Base Bias Current Effect On Sige Hbts(Article) Subject:
Brief Description
Author:
Y. S
Lin
page:
132
-
135
Effects Of Pai On Interface Properties Between Hfsio Gate Dielectric And Silicon Substrate(Article) Subject:
Brief Description
Author:
Hiroshi
Wada
page:
136
-
139
Effects Of Pre-Reset Conditions On Reset Discharge From Ramp Reset Waveforms In Ac Plasma Display Panel(Article) Subject:
Optoelectronics, Displays And Imaging
Author:
B J
Shin
page:
17
-
22
Two-Dimensional Analytical Threshold Voltage Model For Dmg Epi-Mosfet(Article) Subject:
Silicon Devices
Author:
K
Goel
page:
23
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29
Modeling Mechanical Stress Effect On Dopant Diffusion In Scaled Mosfets(Article) Subject:
Silicon Devices
Author:
Y M
Sheu
page:
30
-
38
Threshold Voltage Control In Nisi-Gated Mosfets Through Siis(Article) Subject:
Silicon Devices
Author:
Jakub
Kedzierski
page:
39
-
46
Simulated Operation And Properties Of Source-Gated Thin-Film Transistors(Article) Subject:
Silicon Devices
Author:
T
Lindner
page:
47
-
55
Nanoscale Finfets With Gate-Source-Drain Underlap(Article) Subject:
Silicon Devices
Author:
V P
Trivedi
page:
56
-
62
High-Voltage Normally Off Gan Mosfets On Sapphire Substrates(Article) Subject:
Compound Semiconductor Devices
Author:
K
Matocha
page:
6
-
10
Impacts Of Nonrectangular Fin Cross Section On The Electrical Characteristics Of Finfet(Article) Subject:
Silicon Devices
Author:
X.
Wu
page:
63
-
68
Impact Ionization Mos (I-Mos) Part I: Device And Circuit Simulations(Article) Subject:
Silicon Devices
Author:
K
Gopalakrishnan
page:
69
-
76
Impact Ionization Mos (I-Mos) Part Ii: Experimental Results(Article) Subject:
Silicon Devices
Author:
K
Gopalakrishnan
page:
77
-
84
Investigation Of The Source/Drain Asymmetric Effects Due To Gate Misalignment In Planar Doubl-Gate Mosfets(Article) Subject:
Silicon Devices
Author:
C
Yin
page:
85
-
90
Modeling Of Boron And Phosphorus Implantation Into (100) Germanium(Article) Subject:
Solid-State Device Phenomena
Author:
Y S
Suh
page:
91
-
98
Analysis And Design Of The Dual-Gate Inversion Layer Emitter Transistor(Article) Subject:
Solid-State Device Phenomena
Author:
N K
Udugampola
page:
99
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105